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S34MS04G204TFB010
S34MS04G204TFB010
Flash S34MS04G204TFB010
Cypress
S34MS04G204TFB010
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991b.1.a.
Page Size1Kbyte
Pin Count48
AutomotiveYes
Boot BlockNo
ECC SupportYes
PCB changed48
Part StatusObsolete
Sector Size64Kbyte x 8192
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words256M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleYes
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)29
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial Plus
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
SLC NAND Flash Parallel 1.8V 4G-bit 256M x 16 Automotive 48-Pin TSOP-I Tray
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