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S34ML08G201BHB000
S34ML08G201BHB000
Flash S34ML08G201BHB000
Cypress
S34ML08G201BHB000
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPUnknown
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
Page Size2Kbyte
Pin Count63
AutomotiveYes
Boot BlockNo
ECC SupportYes
PCB changed63
Timing TypeAsynchronous
Package Width9
Interface TypeParallel
Package Height1(Max) - 0.25(Min)
Package Length11
Number of Words1G
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)8G
Command CompatibleYes
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (S)0.0035(Typ)/Block
Operating Current (mA)30
Address Bus Width (bit)31
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial Plus
Maximum Programming Time (ms)0.3(Typ)
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 8G-bit 1G x 8 Automotive 63-Pin BGA Tray
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