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S34ML04G300TFV103
S34ML04G300TFV103
Flash S34ML04G300TFV103
Cypress
S34ML04G300TFV103
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size4Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed48
Part StatusUnconfirmed
Sector Size256Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words512M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleYes
Program Current (mA)35
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)35
Address Bus Width (bit)31
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial Plus
Maximum Programming Time (ms)0.6
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8 48-Pin TSOP-I T/R
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