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S34ML04G200BHV003
S34ML04G200BHV003
Flash S34ML04G200BHV003
Cypress
S34ML04G200BHV003
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
Page Size2Kbyte
Pin Count63
AutomotiveYes
Boot BlockNo
ECC SupportYes
PCB changed63
Part StatusActive
Timing TypeAsynchronous
Package Width9
Interface TypeParallel
Package Height1(Max) - 0.25(Min)
Package Length11
Number of Words512M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleYes
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (S)0.0035(Typ)/Block
Operating Current (mA)30
Address Bus Width (bit)31
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial Plus
Maximum Programming Time (ms)0.3(Typ)
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8 Automotive 63-Pin BGA T/R
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