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S34ML04G104BHV010
S34ML04G104BHV010
Flash S34ML04G104BHV010
Cypress
S34ML04G104BHV010
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
PackagingTray
Page Size1KWords
Pin Count63
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed63
ArchitectureSectored
Package Width9
Package Height1(Max) - 0.25(Min)
Package Length11
Number of Words256M
ProgrammabilityYes
Supplier PackageBGA
Chip Density (bit)4G
Command CompatibleYes
Program Current (mA)30
Support of Page ModeNo
Maximum Erase Time (S)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)29
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial Plus
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
SLC NAND Flash 3V/3.3V 4G-bit 256M x 16 63-Pin BGA Tray
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