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Flash S34ML04G100TFI000
Infineon
S34ML04G100TFI000
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPNo
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size2Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusUnconfirmed
Sector Size128Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words512M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleYes
Program Current (mA)40
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)30
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8
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