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S34ML04G100TFB003
S34ML04G100TFB003
Flash S34ML04G100TFB003
Cypress
S34ML04G100TFB003
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPUnknown
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
PackagingTape and Reel
Page Size2Kbyte
Pin Count48
AutomotiveYes
Boot BlockNo
ECC SupportYes
PCB changed48
ArchitectureSectored
Package Width18.4
Package Height1
Package Length12
Number of Words512M
ProgrammabilityYes
Supplier PackageTSOP-I
Chip Density (bit)4G
Command CompatibleYes
Program Current (mA)30
Support of Page ModeNo
Maximum Erase Time (S)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)30
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial Plus
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash 3V/3.3V 4G-bit 512M x 8 Automotive 48-Pin TSOP-I T/R
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