Product Attribute | Attribute Value |
Cell Type | SLC NAND |
Page Size | 2Kbyte |
Boot Block | No |
ECC Support | Yes |
Timing Type | Asynchronous |
Architecture | Sectored |
Interface Type | Parallel |
Number of Words | 128M |
Programmability | Yes |
Block Organization | Symmetrical |
Chip Density (bit) | 1G |
Command Compatible | Yes |
Process Technology | 4nm |
Program Current (mA) | 30 |
Support of Page Mode | Yes |
Maximum Erase Time (S) | 0.003/Block |
Operating Current (mA) | 30 |
Address Bus Width (bit) | 28 |
Number of Bits/Word (bit) | 8 |
Minimum Endurance (Cycles) | 100000(Typ) |
Supplier Temperature Grade | Industrial |
Maximum Programming Time (ms) | 0.7 |
Maximum Operating Temperature (°C) | 85 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Supply Voltage (V) | 3.6 |
Minimum Operating Supply Voltage (V) | 2.7 |
Typical Operating Supply Voltage (V) | 3|3.3 |
Description |