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S29GL512S11FAIV20
S29GL512S11FAIV20
Flash S29GL512S11FAIV20
Cypress
S29GL512S11FAIV20
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size32byte
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportYes
PCB changed64
Part StatusActive
Sector Size128Kbyte x 512
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height0.6(Min)
Package Length13
Number of Words32M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology65nm, MirrorBit
OE Access Time (ns)35
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)110
Standard Package NameBGA
Location of Boot BlockTop|Bottom
Maximum Erase Time (S)1.1/Sector
Operating Current (mA)60
Page Read Current (mA)25
Address Bus Width (bit)25
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)192/Sector
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 110ns 64-Pin Fortified BGA Tray
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