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S29GL512P10TFI010
S29GL512P10TFI010
Flash S29GL512P10TFI010
Cypress
S29GL512P10TFI010
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size8Words/16byte
Pin Count56
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportNo
PCB changed56
Part StatusObsolete
Sector Size128Kbyte x 512
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length14
Number of Words64M/32M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology90nm, MirrorBit
OE Access Time (ns)25
Program Current (mA)90
Support of Page ModeYes
Max. Access Time (ns)100
Standard Package NameSOP
Maximum Erase Time (S)1024/Chip
Operating Current (mA)110
Page Read Current (mA)20
Address Bus Width (bit)26/25
Programming Voltage (V)2.7 to 3.6|11.5 to 12.5
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)492000(Typ)/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 100ns 56-Pin TSOP Tray
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