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S29GL01GT10FHI020
S29GL01GT10FHI020
Flash S29GL01GT10FHI020
Cypress
S29GL01GT10FHI020
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Page Size32byte
Pin Count64
AutomotiveNo
Boot BlockYes
ECC SupportYes
PCB changed64
Part StatusActive
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height0.6(Min)
Package Length13
Number of Words128M/64M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleYes
Process Technology45nm, MirrorBit
OE Access Time (ns)35
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)100
Location of Boot BlockTop|Bottom
Maximum Erase Time (s)3.5/Sector
Operating Current (mA)60
Page Read Current (mA)25
Address Bus Width (bit)27/26
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)15
Maximum Programming Time (ms)0.75/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 100ns 64-Pin Fortified BGA Tray
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