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S29GL01GS11WEI029
S29GL01GS11WEI029
Flash S29GL01GS11WEI029
Cypress
S29GL01GS11WEI029
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPNo
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991.B.1.A
PackagingJar
AutomotiveNo
Boot BlockYes
ECC SupportYes
Part StatusUnconfirmed
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words64M
ProgrammabilityYes
Supplier PackageWafer
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleYes
OE Access Time (ns)25
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)110
Location of Boot BlockBottom|Top
Maximum Erase Time (S)1.1/Sector
Operating Current (mA)60
Page Read Current (mA)25
Address Bus Width (bit)26
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)15
Maximum Programming Time (ms)192/Sector
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NOR Flash Parallel 3.3V 1G-bit 64M x 16 110ns Wafer Jar
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