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S29AL016J55FFI010
S29AL016J55FFI010
Flash S29AL016J55FFI010
Cypress
S29AL016J55FFI010
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusUnconfirmed
Sector Size8Kbyte x 2|16Kbyte x 1|32Kbyte x 1|64Kbyte x 31
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height0.6(Min)
Package Length9
Number of Words2M/1M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationAsymmetrical
Chip Density (bit)16M
Command CompatibleYes
OE Access Time (ns)30
Program Current (mA)30
Support of Page ModeNo
Max. Access Time (ns)55
Standard Package NameBGA
Location of Boot BlockTop
Maximum Erase Time (s)10/Sector
Operating Current (mA)12
Address Bus Width (bit)21/20
Programming Voltage (V)3 to 3.6
Number of Bits/Word (bit)8/16
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)160000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 16M-bit 2M x 8/1M x 16 55ns 64-Pin Fortified BGA Tray
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