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S26KL128SDABHN020
S26KL128SDABHN020
Flash S26KL128SDABHN020
Cypress
S26KL128SDABHN020
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Pin Count24
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportYes
PCB changed24
Part StatusActive
Sector Size64Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeHyper
Package Height1(Max) - 0.2(Min)
Package Length8
Number of Words16M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)96
Standard Package NameBGA
Location of Boot BlockTop|Bottom
Maximum Erase Time (s)115/Chip
Operating Current (mA)180
Address Bus Width (bit)18
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeExtended
Maximum Programming Time (ms)1.26/Word
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Hyper 3V/3.3V 128M-bit 16M x 8 96ns 24-Pin Fortified BGA Tray
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