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S25HL01GTFABHM030
S25HL01GTFABHM030
Flash S25HL01GTFABHM030
Cypress
S25HL01GTFABHM030
--
Memory
Flash
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size256byte|512byte
Pin Count24
Boot BlockYes
ECC SupportYes
PCB changed24
Part StatusActive
Sector Size256Kbyte x 512
Timing TypeSynchronous
ArchitectureSectored
Package Width8
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Length8
Number of Words128M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleYes
Process Technology45nm, MirrorBit
Program Current (mA)50
Support of Page ModeNo
Location of Boot BlockBottom|Top
Operating Current (mA)53
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)2560000
Supplier Temperature GradeAutomotive
Maximum Operating Frequency (MHz)166
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 1G-bit 128M x 8 24-Pin BGA Tray
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