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NAND08GW3D2AN6E
NAND08GW3D2AN6E
Flash NAND08GW3D2AN6E
Micron Technology
NAND08GW3D2AN6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size2Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportYes
PCB changed48
Part StatusUnconfirmed
Sector Size512Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words1G
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)8G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Max. Access Time (ns)60000
Standard Package NameSOP
Maximum Erase Time (s)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)31
Number of Bits/Word (bit)8
Maximum Page Access Time (ns)25(Min)
Maximum Programming Time (ms)2/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NAND Flash Parallel 3V/3.3V 8G-bit 1G x 8 60us 48-Pin TSOP Tray
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