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NAND08GW3C2AN1F
NAND08GW3C2AN1F
Flash NAND08GW3C2AN1F
Micron Technology
NAND08GW3C2AN1F
--
Memory
Flash
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
Cell TypeMLC NAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size2Kbyte
Pin Count48
AutomotiveUnknown
Boot BlockNo
Lead ShapeGull-wing
ECC SupportYes
PCB changed48
Part StatusUnconfirmed
Sector Size256Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words1G
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)8G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Max. Access Time (ns)60000
Standard Package NameSOP
Maximum Erase Time (s)0.003/Block
Operating Current (mA)30
Address Bus Width (bit)30
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)2/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
MLC NAND Flash Parallel 3V/3.3V 8G-bit 1G x 8 60us 48-Pin TSOP T/R
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