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NAND01GR3B2BZA6E
NAND01GR3B2BZA6E
Flash NAND01GR3B2BZA6E
Micron Technology
NAND01GR3B2BZA6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size2Kbyte
Pin Count63
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed63
Part StatusObsolete
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height0.7(Max)
Package Length11
Number of Words128M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleYes
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)25000
Standard Package NameBGA
Maximum Erase Time (s)0.003/Block
Operating Current (mA)20
Address Bus Width (bit)28
Number of Bits/Word (bit)8
Maximum Page Access Time (ns)45(Min)
Maximum Programming Time (ms)0.7/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NAND Flash Parallel 1.8V 1G-bit 128M x 8 25us 63-Pin VFBGA Tray
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