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MT29F1G08ABAFAH4-ITE:F
MT29F1G08ABAFAH4-ITE:F
Flash MT29F1G08ABAFAH4-ITE:F
Micron Technology
MT29F1G08ABAFAH4-ITE:F
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size2Kbyte
AutomotiveNo
Boot BlockYes
ECC SupportYes
Part StatusActive
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words128M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleNo
Program Current (mA)20
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)35
Address Bus Width (bit)28
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeAutomotive
Maximum Programming Time (ms)0.6
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 1G-bit 128M x 8 63-Pin VFBGA
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