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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F16G08ABACAWP-ITZ:C
MT29F16G08ABACAWP-ITZ:C
Flash MT29F16G08ABACAWP-ITZ:C
Micron Technology
MT29F16G08ABACAWP-ITZ:C
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)EAR99
PackagingTray
Page Size4Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusLTB
Sector Size512Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words2G
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)16G
Command CompatibleNo
Process TechnologyPolyimide
Program Current (mA)50
Support of Page ModeYes
Max. Access Time (ns)20
Maximum Erase Time (s)0.007/Block
Operating Current (mA)50
Address Bus Width (bit)32
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)60000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.56/Page
Maximum Operating Frequency (MHz)100
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 16G-bit 2G x 8 20ns 48-Pin TSOP-I Tray
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