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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F16G08ABABAWP-AIT:B TR
MT29F16G08ABABAWP-AIT:B TR
Flash MT29F16G08ABABAWP-AIT:B TR
Micron Technology
MT29F16G08ABABAWP-AIT:B TR
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Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPUnknown
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size4Kbyte
AutomotiveYes
Boot BlockNo
ECC SupportYes
Part StatusLTB
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words2G
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)16G
Command CompatibleYes
Program Current (mA)50
Support of Page ModeYes
Max. Access Time (ns)20
Maximum Erase Time (s)0.0035/Block
Operating Current (mA)50
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeAutomotive
Maximum Programming Time (ms)0.5/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 16G-bit 2G x 8 20ns Automotive 48-Pin TSOP-I
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