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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT25QU512ABB1EW9-0SIT TR
MT25QU512ABB1EW9-0SIT TR
Flash MT25QU512ABB1EW9-0SIT TR
Micron Technology
MT25QU512ABB1EW9-0SIT TR
--
Memory
Flash
MT25QU512ABB1EW9-0SIT TR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size256byte
Pin Count8
AutomotiveNo
Boot BlockNo
Lead ShapeNo Lead
ECC SupportNo
PCB changed8
Part StatusActive
Sector Size64Kbyte x 1024
Timing TypeSynchronous
ArchitectureSectored
Package Width8
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.7(Min)
Package Length6
Number of Words512M/256M/128M
ProgrammabilityYes
Supplier PackageWPDFN EP
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Program Current (mA)35
Support of Page ModeNo
Max. Access Time (ns)6
Standard Package NameDFN
Maximum Erase Time (s)1/Sector
Operating Current (mA)35
Address Bus Width (bit)32
Programming Voltage (V)1.7 to 2
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)1.8/Page
Maximum Operating Frequency (MHz)166
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 6ns 8-Pin WPDFN EP Tray
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