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Flash MBM29F800BA-70PFTN-SFLE1
Cypress
MBM29F800BA-70PFTN-SFLE1
--
Memory
Flash
Specification
| Product Attribute | Attribute Value |
| HTS | 8542.32.00.71 |
| PPAP | No |
| EU RoHS | Compliant |
| Cell Type | NOR |
| ECCN (US) | EAR99 |
| Automotive | No |
| Boot Block | Yes |
| ECC Support | No |
| Part Status | Obsolete |
| Sector Size | 8Kbyte x 2|16Kbyte x 1|32Kbyte x 1|64Kbyte x 15 |
| Timing Type | Asynchronous |
| Architecture | Sectored |
| Interface Type | Parallel |
| Number of Words | 1M/512K |
| Programmability | Yes |
| Block Organization | Asymmetrical |
| Chip Density (bit) | 8M |
| Command Compatible | Yes |
| OE Access Time (ns) | 30 |
| Program Current (mA) | 50 |
| Support of Page Mode | No |
| Max. Access Time (ns) | 70 |
| Location of Boot Block | Bottom |
| Maximum Erase Time (s) | 8/Sector |
| Operating Current (mA) | 45 |
| Address Bus Width (bit) | 20/19 |
| Programming Voltage (V) | 4.5 to 5.5 |
| Number of Bits/Word (bit) | 8/16 |
| Supplier Temperature Grade | Industrial |
| Maximum Programming Time (ms) | 20000/Chip |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 5.5 |
| Minimum Operating Supply Voltage (V) | 4.5 |
| Typical Operating Supply Voltage (V) | 5 |
| Description |
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