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M58PR512LE96ZAC5
M58PR512LE96ZAC5
Flash M58PR512LE96ZAC5
Micron Technology
M58PR512LE96ZAC5
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
Bank Size64/64/64/64/64/64/64/64Mb
Cell TypeNOR
ECCN (US)3A991.b.1.a
Page Size16Words
Pin Count107
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed107
Part StatusUnconfirmed
Sector Size128Kbyte x 512
Timing TypeAsynchronous|Synchronous
ArchitectureSectored
Package Width8
Interface TypeParallel|Serial
Package Height0.85
Package Length11
Number of Banks8
Number of Words32M
ProgrammabilityYes
Supplier PackageTFBGA
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleNo
Process Technology65nm
OE Access Time (ns)25
Program Current (mA)50
Support of Page ModeYes
Max. Access Time (ns)96
Standard Package NameBGA
Maximum Erase Time (s)4/Main Block
Operating Current (mA)30
Page Read Current (mA)10
Address Bus Width (bit)25
Programming Voltage (V)1.7 to 2|8.5 to 9.5
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)550(Typ)/Main Block
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-30
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Parallel/Serial 1.8V 512M-bit 32M x 16 96ns 107-Pin TFBGA
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