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M29W128GL70N3E
M29W128GL70N3E
Flash M29W128GL70N3E
Micron Technology
M29W128GL70N3E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size8Words/16byte
Pin Count56
AutomotiveYes
Boot BlockYes
Lead ShapeGull-wing
ECC SupportNo
PCB changed56
Part StatusObsolete
Sector Size128Kbyte x 128
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length14
Number of Words16M/8M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
OE Access Time (ns)25
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)70
Standard Package NameSOP
Location of Boot BlockBottom|Top
Maximum Erase Time (s)400/Chip
Operating Current (mA)10
Page Read Current (mA)15
Address Bus Width (bit)24/23
Programming Voltage (V)2.7 to 3.6|11.4 to 12.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)800000/Chip
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns Automotive 56-Pin TSOP Tray
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