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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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KLMCG4JETD-B0410
KLMCG4JETD-B0410
Flash KLMCG4JETD-B0410
Samsung Electronics
KLMCG4JETD-B0410
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
Pin Count153
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportYes
PCB changed153
Part StatusActive
Timing TypeSynchronous
Package Width11.5
Interface TypeSerial e-MMC
Package Height0.71
Package Length13
Number of Words512G/128G/64G
ProgrammabilityYes
Supplier PackageFBGA
Chip Density (bit)512G
Command CompatibleYes
Support of Page ModeNo
Standard Package NameBGA
Maximum Erase Time (S)0.02
Number of Bits/Word (bit)1/4/8
Maximum Operating Frequency (MHz)200
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Operating Supply Voltage (V)1.95|3.6
Minimum Operating Supply Voltage (V)1.7|2.7
Typical Operating Supply Voltage (V)1.8|3.3
Description
NAND Flash Serial e-MMC 1.8V/3.3V 512G-bit 512G/128G/64G x 1/4-bit/8-bit 153-Pin FBGA
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