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AM29F800BT-70EF(SPANSION)
AM29F800BT-70EF(SPANSION)
Flash AM29F800BT-70EF(SPANSION)
Cypress
AM29F800BT-70EF(SPANSION)
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
EU RoHSCompliant
Cell TypeNOR
ECCN (US)EAR99
Boot BlockYes
ECC SupportNo
Part StatusObsolete
Sector Size8Kbyte x 2|16Kbyte x 1|32Kbyte x 1|64Kbyte x 15
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words1M/512K
ProgrammabilityYes
Block OrganizationAsymmetrical
Chip Density (bit)8M
Command CompatibleYes
Process TechnologyCMOS
OE Access Time (ns)30
Program Current (mA)60
Support of Page ModeNo
Max. Access Time (ns)70
Location of Boot BlockTop
Maximum Erase Time (S)8/Sector
Operating Current (mA)50
Address Bus Width (bit)20/19
Programming Voltage (V)4.5 to 5.5
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)1000000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)21600/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)5.5
Minimum Operating Supply Voltage (V)4.5
Typical Operating Supply Voltage (V)5
Description
NOR Flash Parallel 5V 8M-bit 1M x 8/512K x 16 70ns 48-Pin TSOP
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