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Discrete Semiconductor Products NP33N06YDG-E1-AY
Renesas Electronics
NP33N06YDG-E1-AY
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other
Discrete Semiconductor Products
Specification
| Product Attribute | Attribute Value |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead Exposed Pad |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 16.5A, 10V |
| Power Dissipation (Max) | 1W (Ta), 97W (Tc) |
| Supplier Device Package | 8-HSON |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Description |
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