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Discrete Semiconductor Products N0412N-S19-AY
Renesas Electronics
N0412N-S19-AY
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other
Discrete Semiconductor Products
Specification
| Product Attribute | Attribute Value |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 50A, 10V |
| Power Dissipation (Max) | 1.5W (Ta), 119W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5550 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Description |
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