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Discrete Semiconductor Products HAT1127HWS-E
Renesas Electronics
HAT1127HWS-E
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Discrete Semiconductor Products
Specification
| Product Attribute | Attribute Value |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | +10V, -20V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Package / Case | SC-100, SOT-669 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Supplier Device Package | LFPAK |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Description |
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