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Discrete Semiconductor Products 2SJ649-AZ
Renesas Electronics
2SJ649-AZ
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Discrete Semiconductor Products
Specification
| Product Attribute | Attribute Value |
| Package | Bulk |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Isolated Tab |
| Product Status | Last Time Buy |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 10A, 10V |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Supplier Device Package | TO-220 Isolated Tab |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Description |
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