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Darlington BJT NCV1413BDR2G
onsemi
NCV1413BDR2G
--
Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8542330001 |
| PPAP | Yes |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 16 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 16 |
| Part Status | Active |
| Configuration | Array 7 |
| Package Width | 4(Max) |
| Package Height | 1.5(Max) |
| Package Length | 10(Max) |
| Supplier Package | SOIC |
| Standard Package Name | SOP |
| Minimum DC Current Gain | 1000@350mA@2V |
| Maximum Base Current (A) | 0.025 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 7 |
| Minimum DC Current Gain Range | 500 to 3600 |
| Maximum Emitter Base Voltage (V) | 30 |
| Maximum Operating Temperature (°C) | 125 |
| Minimum Operating Temperature (°C) | -40 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Continuous DC Collector Current (A) | 0.5 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.6@500uA@350mA|1.1@250uA@100mA|1.3@350uA@200mA |
| Description |
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