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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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KSH112ITU
KSH112ITU
Darlington BJT KSH112ITU
onsemi
KSH112ITU
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Diodes, Transistors and Thyristors
Darlington BJT
KSH112ITU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.3
Package Height6.1
Package Length6.6
Supplier PackageIPAK
Standard Package NameTO-251
Minimum DC Current Gain1000@2A@3V|200@4A@3V|500@500mA@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1750
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Current Gain Bandwidth (MHz)25(Min)
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (uA)20
Maximum Base Emitter Saturation Voltage (V)4@40mA@4A
Maximum Continuous DC Collector Current (A)2
Maximum Collector-Emitter Saturation Voltage (V)2@8mA@2A|3@40mA@4A
Description
Trans Darlington NPN 100V 2A 1750mW 3-Pin(3+Tab) IPAK Rail
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