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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N6301
JAN2N6301
Darlington BJT JAN2N6301
Microchip Technology
JAN2N6301
--
Diodes, Transistors and Thyristors
Darlington BJT
JAN2N6301.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width17.78
Package Height8.64(Max)
Package Length24.43(Max) + 7.36
Supplier PackageTO-66
Standard Package NameTO
Minimum DC Current Gain500@1A@3V|750@4A@3V|100@8A@3V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)2.8@4A@3V|4@80mA@8A
Maximum Continuous DC Collector Current (A)8
Maximum Collector-Emitter Saturation Voltage (V)2@16mA@4A|3@80mA@8A
Description
Trans Darlington NPN 80V 8A 75000mW 3-Pin(2+Tab) TO-66 Tray
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