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Darlington BJT 2SB1234-TB-E
onsemi
2SB1234-TB-E
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Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 1.5 |
| Package Height | 1.1 |
| Package Length | 2.9 |
| Supplier Package | Case CP |
| Minimum DC Current Gain | 5000@10mA@2V|3000@100mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 200 |
| Maximum Emitter Base Voltage (V) | 10 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Collector Cut-Off Current (uA) | 0.1 |
| Maximum Base Emitter Saturation Voltage (V) | 2@100uA@100mA |
| Maximum Continuous DC Collector Current (A) | 0.2 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.5@100uA@100mA |
| Description |
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