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Darlington BJT 2SB1214-TL-E
onsemi
2SB1214-TL-E
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Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| Type | PNP |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Automotive | No |
| Part Status | Obsolete |
| Configuration | Single |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 1000@2A@2V|2000@1A@2V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain Range | 500 to 3600 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (uA) | 10 |
| Maximum Base Emitter Saturation Voltage (V) | 2@4mA@2A |
| Maximum Continuous DC Collector Current (A) | 3 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.5@4mA@2A |
| Description |
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