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Darlington BJT 2N6426-D26Z
onsemi
2N6426-D26Z
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Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Formed |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 4.19(Max) |
| Package Height | 5.33(Max) |
| Package Length | 5.2(Max) |
| Supplier Package | TO-92 |
| Standard Package Name | TO-92 |
| Minimum DC Current Gain | 20000@10mA@5V|20000@500mA@5V|30000@100mA@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 625 |
| Maximum Emitter Base Voltage (V) | 12 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Collector Cut-Off Current (uA) | 0.05 |
| Maximum Base Emitter Saturation Voltage (V) | 2@0.5mA@500mA |
| Maximum Continuous DC Collector Current (A) | 1.2 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.2@0.5mA@50mA|1.5@0.5mA@500mA |
| Description |
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