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Darlington BJT 2N6299E3
Microchip Technology
2N6299E3
--
Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 2 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 17.78 |
| Package Height | 8.64(Max) |
| Package Length | 24.43(Max) + 7.36 |
| Supplier Package | TO-66 |
| Standard Package Name | TO |
| Minimum DC Current Gain | 500@1A@3V|750@4A@3V|100@8A@3V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 64000 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Base Emitter Saturation Voltage (V) | 4@80mA@8A |
| Maximum Continuous DC Collector Current (A) | 8 |
| Maximum Collector-Emitter Saturation Voltage (V) | 2@80mA@8A |
| Description |
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