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DRAM Chip MT48H32M16LFB4-6 IT:CTR
Micron Technology
MT48H32M16LFB4-6 IT:CTR
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Supplier Unconfirmed |
| DRAM Type | Mobile LPSDR SDRAM |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Part Status | Unconfirmed |
| Organization | 32Mx16 |
| Interface Type | LVTTL |
| Chip Density (bit) | 512M |
| Process Technology | CMOS |
| Data Bus Width (bit) | 16 |
| Operating Current (mA) | 100 |
| Address Bus Width (bit) | 15 |
| Maximum Access Time (ns) | 8|5 |
| Maximum Clock Rate (MHz) | 166 |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 8M |
| Number of Bits/Word (bit) | 16 |
| Number of I/O Lines (bit) | 16 |
| Supplier Temperature Grade | Industrial |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 1.95 |
| Minimum Operating Supply Voltage (V) | 1.7 |
| Typical Operating Supply Voltage (V) | 1.8 |
| Description |
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