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MT46H256M32L4LE-48 WT:C
MT46H256M32L4LE-48 WT:C
DRAM Chip MT46H256M32L4LE-48 WT:C
Micron Technology
MT46H256M32L4LE-48 WT:C
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeMobile LPDDR SDRAM
ECCN (US)EAR99
Pin Count168
AutomotiveNo
Lead ShapeBall
PCB changed168
Part StatusObsolete
Organization256Mx32
Package Width12
Package Height0.9 - 0.24(Min)
Package Length12
Supplier PackageTFBGA
Chip Density (bit)8G
Process TechnologyCMOS
Data Bus Width (bit)16
Standard Package NameBGA
Address Bus Width (bit)16
Maximum Access Time (ns)4.8
Maximum Clock Rate (MHz)208
Number of Internal Banks16
Number of Words per Bank32M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip Mobile LPDDR SDRAM 8Gbit 256Mx32 1.8V 168-Pin TFBGA
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