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K4T51163QI-HCE7000
K4T51163QI-HCE7000
DRAM Chip K4T51163QI-HCE7000
Samsung Electronics
K4T51163QI-HCE7000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
DRAM TypeDDR2 SDRAM
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Organization32Mx16
Interface TypeSSTL_1.8
Chip Density (bit)512M
Data Bus Width (bit)16
Operating Current (mA)130
Address Bus Width (bit)15
Maximum Access Time (ns)0.4
Maximum Clock Rate (MHz)800
Number of Internal Banks4
Number of Words per Bank8M
Number of Bits/Word (bit)16
Number of I/O Lines (bit)16
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)1.9
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V
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