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DRAM Chip K4B2G1646F-BCK0T00
Samsung Electronics
K4B2G1646F-BCK0T00
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
EU RoHSCompliant
DRAM TypeDDR3 SDRAM
ECCN (US)EAR99
Part StatusObsolete
Organization128Mx16
Chip Density (bit)2G
Data Bus Width (bit)16
Number of Internal Banks8
Number of Words per Bank16M
Number of Bits/Word (bit)16
Maximum Operating Supply Voltage (V)1.575
Minimum Operating Supply Voltage (V)1.425
Typical Operating Supply Voltage (V)1.5
Description
DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V
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