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K4B2G0846Q-BCK0T00
K4B2G0846Q-BCK0T00
DRAM Chip K4B2G0846Q-BCK0T00
Samsung Electronics
K4B2G0846Q-BCK0T00
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
DRAM TypeDDR3 SDRAM
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Organization256Mx8
Chip Density (bit)2G
Data Bus Width (bit)8
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)8
Maximum Operating Supply Voltage (V)1.575
Minimum Operating Supply Voltage (V)1.425
Typical Operating Supply Voltage (V)1.5
Description
DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V
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