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DRAM Chip K4B1G1646I-BCK0000
Samsung Electronics
K4B1G1646I-BCK0000
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
DRAM TypeDDR3 SDRAM
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Organization64Mx16
Chip Density (bit)1G
Data Bus Width (bit)16
Number of Internal Banks8
Number of Words per Bank8M
Number of Bits/Word (bit)16
Maximum Operating Supply Voltage (V)1.575
Minimum Operating Supply Voltage (V)1.425
Typical Operating Supply Voltage (V)1.5
Description
DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V
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