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K4A8G085WB-BIRCTCV
K4A8G085WB-BIRCTCV
DRAM Chip K4A8G085WB-BIRCTCV
Samsung Electronics
K4A8G085WB-BIRCTCV
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Memory
DRAM Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
DRAM TypeDDR4 SDRAM
ECCN (US)EAR99
Pin Count78
AutomotiveNo
Lead ShapeBall
PCB changed78
Part StatusActive
Organization1Gx8
Package Width7.5
Interface TypePOD
Package Length11
Supplier PackageFBGA
Chip Density (bit)8G
Data Bus Width (bit)8
Standard Package NameBGA
Operating Current (mA)107
Address Bus Width (bit)18
Maximum Access Time (ns)0.175
Maximum Clock Rate (MHz)2400
Number of Internal Banks16
Number of Words per Bank64M
Number of Bits/Word (bit)8
Number of I/O Lines (bit)8
Supplier Temperature GradeIndustrial
Maximum Operating Temperature (°C)95
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.26
Minimum Operating Supply Voltage (V)1.14
Typical Operating Supply Voltage (V)1.2
Description
DRAM Chip DDR4 SDRAM 8Gbit 1Gx8 1.2V 78-Pin FBGA
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