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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BLF2425M7L140,112
BLF2425M7L140,112
RF FETs BLF2425M7L140,112
NXP
BLF2425M7L140,112
--
Diodes, Transistors and Thyristors
RF FETs
BLF2425M7L140,112.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveUnknown
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.72(Max)
Package Length34.16(Max)
Output Power (W)140(Typ)
Supplier PackageSOT-502A
Maximum IDSS (uA)5
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)2500
Minimum Frequency (MHz)2400
Typical Power Gain (dB)18.5
Number of Elements per Chip1
Typical Drain Efficiency (%)52
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)16
Maximum Drain Source Resistance (mOhm)69(Typ)@6.05V
Maximum Gate Source Leakage Current (nA)500
Description
Trans RF MOSFET N-CH 65V 3-Pin SOT-502A
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