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RF FETs BLF1822-10,112
NXP
BLF1822-10,112
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Supplier Unconfirmed |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Bulk |
| Pin Count | 3 |
| Automotive | Unknown |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Single |
| Package Width | 5.97(Max) |
| Package Height | 4.67(Max) |
| Package Length | 20.45(Max) |
| Output Power (W) | 10 |
| Supplier Package | LDMOST |
| Mode of Operation | CW Class-AB|2-Tone Class-AB |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 2200 |
| Minimum Frequency (MHz) | 30 |
| Typical Power Gain (dB) | 18.5 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 39 |
| Maximum Gate Source Voltage (V) | ±15 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 2.2 |
| Typical Forward Transconductance (S) | 0.5 |
| Typical Input Capacitance @ Vds (pF) | 13@26V |
| Typical Output Capacitance @ Vds (pF) | 11@26V |
| Maximum Drain Source Resistance (mOhm) | 1200(Typ)@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 0.5@26V |
| Description |
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