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BG3123RH6327XTSA1
BG3123RH6327XTSA1
RF FETs BG3123RH6327XTSA1
Infineon
BG3123RH6327XTSA1
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Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationDual
Package Width1.25
Package Height0.9(Max)
Package Length2
Supplier PackageSOT-363
Standard Package NameSOT-26
Typical Power Gain (dB)32@Amp A|30@Amp B
Number of Elements per Chip2
Maximum Power Dissipation (mW)200
Maximum Gate Source Voltage (V)±6
Maximum Drain Source Voltage (V)8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.025
Typical Forward Transconductance (S)0.3
Typical Input Capacitance @ Vds (pF)1.9@5V@Gate 1@Amp A|1.5@5V@Gate 1@Amp B
Description
Trans RF MOSFET N-CH 8V 0.025A Automotive 6-Pin SOT-363 T/R
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