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RF BJT BFR 740L3 E6327
Infineon
BFR 740L3 E6327
--
Diodes, Transistors and Thyristors
RF BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | SiGe |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 0.6 |
| Package Height | 0.35(Max) |
| Package Length | 1 |
| Supplier Package | TSLP |
| Standard Package Name | TSLP |
| Minimum DC Current Gain | 160@25mA@3V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain Range | 120 to 200 |
| Maximum Power Dissipation (mW) | 160 |
| Maximum DC Collector Current (A) | 0.013 |
| Maximum Emitter Base Voltage (V) | 1.2 |
| Maximum Collector Base Voltage (V) | 13 |
| Maximum Transition Frequency (MHz) | 42000(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 4 |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Description |
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