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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIRA36DP-T1-GE3
SIRA36DP-T1-GE3
MOSFETs SIRA36DP-T1-GE3
Vishay
SIRA36DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIRA36DP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)10|9
Typical Rise Time (ns)10|52
Number of Elements per Chip1
Maximum Power Dissipation (mW)4100
Typical Gate Charge @ 10V (nC)37
Typical Gate Charge @ Vgs (nC)17.3@4.5V|37@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)12|28
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)26|25
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)40
Typical Input Capacitance @ Vds (pF)2815@15V
Maximum Drain Source Resistance (MOhm)2.8@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO T/R
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